Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN

Author： Hu G.  

Publisher： Springer Publishing Company

ISSN： 0261-8028

Source： Journal of Materials Science Letters, Vol.22, Iss.22, 2003-11, pp. : 1581-1583

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Surface Morphology of AlN Nucleation Layer Grown on Si by MOCVD

By  

Advanced Materials Research, Vol. 2015, Iss. 1120, 2015-08 ,pp. : 391-395

Trans Tech Publications

Access to resources Recommend Favorite

Study on the AlN/Si(111) interface properties

By Xi D.J.   Zheng Y.D.   Chen P.   Chu R.M.   Gu S.L.   Shen B.   Zhang R.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 143-146

Elsevier

Access to resources Recommend Favorite

Dielectric properties of AlN film on Si substrate

By Bi Z. X.   Zheng Y. D.   Zhang R.   Gu S. L.   Xiu X. Q.   Zhou L. L.   Shen B.   Chen D. J.   Shi Y.  

Journal of Materials Science: Materials in Electronics, Vol. 15, Iss. 5, 2004-05 ,pp. : 317-320

Springer Publishing Company

Access to resources Recommend Favorite

Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

By Kim M.   Kim T.  

Journal of Materials Science, Vol. 40, Iss. 20, 2005-10 ,pp. : 5533-5535

Springer Publishing Company

Access to resources Recommend Favorite

Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

By Chu R.M.   Zheng Y.D.   Zhou Y.G.   Gu S.L.   Shen B.   Zhang R.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 207-210

Elsevier

Access to resources Recommend Favorite