Effect of annealing temperature on electrical characteristics of ruthenium-based Schottky contacts on n-type GaN

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Journal of Materials Science: Materials in Electronics, Vol. 17, Iss. 12, 2006-12 ,pp. : 999-1004

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Influence of oxygen and post deposition annealing on the electrical properties of MnPc and MnPcCl Schottky barrier devices

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Journal of Materials Science, Vol. 40, Iss. 5, 2005-03 ,pp. : 1115-1120

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Effect of thermal annealing on the surface, optical, and structural properties of p-type ZnSe thin films grown on GaAs (100) substrates

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Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure

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p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing

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