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Springer Publishing Company

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p-Type conversion of Si-doped n-type GaN epilayers due to neutron transmutation doping and annealing

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Implantation and annealing studies of Tm-implanted GaN

By Lorenz K.   Alves E.   Wahl U.   Monteiro T.   Dalmasso S.   Martin R.W.   O'Donnell K.P.   Vianden R.  

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Effect of surface treatments on Schottky contact on n-Al x Ga 1-x N/GaN heterostructures

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Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

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