Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe

By Voitsekhovskii A.   Nesmelov S.   Kokhanenko A.   Mashukov Yu.   Zakhar’yash T.   Vasil’ev V.   Varavin V.   Sidorov Yu.   Dvoretskii S.   Mikhailov N.  

Russian Physics Journal, Vol. 48, Iss. 2, 2005-02 ,pp. : 143-147

Springer Publishing Company

Access to resources Recommend Favorite

Electron transport properties of CdTe nanocrystals in SiO 2 /CdTe/SiO 2 thin film structures

By Bera S.K.   Chaudhuri S.   Pal A.K.  

Thin Solid Films, Vol. 415, Iss. 1, 2002-08 ,pp. : 68-77

Elsevier

Access to resources Recommend Favorite

Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe (x = 0.21–0.23)

By Voitsekhovskii A.   Nesmelov S.   Dzyadukh S.   Varavin V.   Dvoretskii S.   Mikhailov N.   Sidorov Yu.   Vasil’ev V.   Zakhar’yash T.   Mashukov Yu.  

Russian Physics Journal, Vol. 49, Iss. 10, 2006-10 ,pp. : 1117-1128

Springer Publishing Company

Access to resources Recommend Favorite

Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric

By Voitsekhovskii A.   Nesmelov S.   Dzyadukh S.   Varavin V.   Dvoretskii S.   Mikhailov N.   Sidorov Yu.   Vasil’ev V.   Yakushev M.  

Russian Physics Journal, Vol. 53, Iss. 2, 2010-07 ,pp. : 148-154

Springer Publishing Company

Access to resources Recommend Favorite

Anisotropically etched Si surface and the electrical properties of Si/HgCdTe heterostructures

By Gorbach T.Y.   Kuzma M.   Smertenko P.S.   Svechnikov S.V.   Wisz G.  

Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. : 165-169

Elsevier

Access to resources Recommend Favorite