Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications

By Pchelyakov O.   Dvurechenskii A.   Nikiforov A.   Voitsekhovskii A.   Grigor’ev D.   Kokhanenko A.  

Russian Physics Journal, Vol. 53, Iss. 9, 2011-02 ,pp. : 943-948

Springer Publishing Company

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Investigation of multilayered Ge/Si structures with varying thicknesses

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Vacuum, Vol. 46, Iss. 3, 1995-03 ,pp. : 269-276

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Near-infrared photodetectors based on polycrystalline Ge evaporated on Si <100> substrates

By Masini Gianlorenzo   Colace Lorenzo   Galluzzi Fabrizio   Assanto Gaetano  

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Taylor & Francis Ltd

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GeSi infrared detectors

By Strong R.   Greve D.W.   Misra R.   Weeks M.   Pellegrini P.  

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Ge-Si intermixing in Ge quantum dots on Si

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