Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

Author： Makhkamov Sh. Tursunov N. Karimov M. Zainabidinov S. Sattiev A. Erdonov M. Kholmedov Kh.

Publisher： Springer Publishing Company

ISSN： 1064-8887

Source： Russian Physics Journal, Vol.53, Iss.5, 2010-10, pp. : 499-503

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