An Effective Potential Approach to Modeling 25 nm MOSFET Devices: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

Author: Ahmed S.   Ringhofer C.   Vasileska D.  

Publisher: Springer Publishing Company

ISSN: 1569-8025

Source: Journal of Computational Electronics, Vol.2, Iss.2-4, 2003-12, pp. : 113-117

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