Journal of Computational Electronics,volume 2,issue 2-4  (12-2013)

Period of time： 2013年2-4期

Publisher： Springer Publishing Company

Founded in： 2002

Total resources： 14

ISSN： 1569-8025

Subject： TM Electrotechnical

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Journal of Computational Electronics,volume 2,issue 2-4

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Editorial: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Lugli Paolo,Di Carlo Aldo in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 71-72

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Scaling MOSFETs to the Limit: A Physicists's Perspective: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Fischetti M.V. in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 73-79

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Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Bufler F.M.,Schenk A.,Fichtner W. in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 81-84

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Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Kathawala Gulzar A.,Mohamed Mohamed,Ravaioli Umberto in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 85-89

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Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Tsuchiya Hideaki,Horino Motoki,Miyoshi Tanroku in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 91-95

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Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Ezaki Tatsuya,Werner Philipp,Hane Masami in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 97-103

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Does Circulation in Individual Current States Survive in the Total Current Density?: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Laux S.E.,Kumar A.,Fischetti M.V. in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 105-108

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Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Nakatsuji Hiroshi,Kamakura Yoshinari,Taniguchi Kenji in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 109-112

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An Effective Potential Approach to Modeling 25 nm MOSFET Devices: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Ahmed S.,Ringhofer C.,Vasileska D. in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 113-117

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Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Takeda H.,Mori N.,Hamaguchi C. in (2003)

Journal of Computational Electronics,volume 2,issue 2-4 , Vol. 2, Iss. 2-4, 2003-12 , pp. 119-122

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