A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

By Li Yiming   Chen Cheng-Kai  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 365-370

Springer Publishing Company

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Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Barker John R.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 153-161

Springer Publishing Company

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A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Carrillo José A.   Gamba Irene M.   Majorana Armando   Shu Chi-Wang  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 375-380

Springer Publishing Company

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Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

By Yang L.   Watling J.   Adamu-Lema F.   Asenov A.   Barker J.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 171-175

Springer Publishing Company

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Splitting-Scheme Solution of the Collisionless Wigner Equation with Non-Parabolic Band Profile: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Demeio Lucio  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 313-316

Springer Publishing Company

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