An Efficient Monte Carlo Procedure for Studying Hole Transport in Doped Semiconductors

Author: Gómez-campos F.   Rodríguez-bolívar S.   Carceller J.  

Publisher: Springer Publishing Company

ISSN: 1569-8025

Source: Journal of Computational Electronics, Vol.3, Iss.3-4, 2004-10, pp. : 329-332

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