Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Curatola G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 309-312

Springer Publishing Company

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Yang L.   Watling J.R.   Boriçi M.   Wilkins R.C.W.   Asenov A.   Barker J.R.   Roy S.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 363-368

Springer Publishing Company

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Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Krishnan Santhosh   Vasileska Dragica  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 443-448

Springer Publishing Company

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Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Watling J.R.   Yang L.   Boriçi M.   Barker J.R.   Asenov A.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 475-479

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A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Boriçi M.   Watling J.R.   Wilkins R.   Yang L.   Barker J.R.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 163-167

Springer Publishing Company

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