Self-consistent 3-D numerical modeling of a uniformly doped nanoscale FinFET using interpolating wavelets

By Ramesh R.  

Journal of Computational Electronics, Vol. 10, Iss. 3, 2011-09 ,pp. : 331-340

Springer Publishing Company

Access to resources Recommend Favorite

3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction

By Bufler F.   Smith L.  

Journal of Computational Electronics, Vol. 12, Iss. 4, 2013-12 ,pp. : 651-657

Springer Publishing Company

Access to resources Recommend Favorite

Efficient full-flow process simulation for 3D structures including stress modeling

By Gencer Alp   Lebedev Andrei   Pfäffli Paul  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 353-356

Springer Publishing Company

Access to resources Recommend Favorite

Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance

By Patsis George   Constantoudis Vassilios   Gogolides Evangelos  

Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 341-344

Springer Publishing Company

Access to resources Recommend Favorite

Effects of Mn-doping on TSDC and degradation of BaTiO 3

By Jeong Jaill   Han Young  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 1051-1055

Springer Publishing Company

Access to resources Recommend Favorite