Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET

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Journal of Computational Electronics, Vol. 10, Iss. 1-2, 2011-06 ,pp. : 141-143

Springer Publishing Company

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Simulation of Schottky Barrier Diodes with a Direct Solver for the Boltzmann-Poisson System

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High Temperature Schottky Barrier on n -Type SrTiO 3 and Its Sensitivity to Ambient Gases

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Schottky Barrier Height at Organic/Metal Junctions from First-Principles: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

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Simulation of piezoresistivity effect in FETs

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