Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

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Journal of Computational Electronics, Vol. 5, Iss. 4, 2006-12 ,pp. : 311-314

Springer Publishing Company

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Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study

By Adamu-Lema Fikru   Roy Gareth   Brown Andrew   Asenov Asen   Roy Scott  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 203-206

Springer Publishing Company

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3D Parallel Simulations of Fluctuation Effects in pHEMTs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

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Development of a graphical user interface for a real-time power system simulator

By Rochefort M.   De Guise N.   Gingras L.  

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Co-Doping Effect of Mn and Y on Charge and Mass Transport Properties of BaTiO 3

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