A New Candidate Material for Use in Ferroelectric Random Access Memory (Fram)

Author： Kang B. S. Noh T. W. So Y. W. Bu S. D. Yoon J.- G. Seo S. Park B. H.

ISSN： 0015-0193

Source： Ferroelectrics, Vol.267, Iss.1, 2002-01, pp. : 121-129

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