Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

Author: Stolichnov Igor   Gysel Roman   Tagantsev Alexander   Riester Sebastian   Setter Nava   Salvatore Giovanni   Bouvet Didier   Ionescu Adrian  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.409, Iss.1, 2010-01, pp. : 185-189

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Abstract