Author： Aleksandrov P. A. Baranova E. K. Baranova I. V. Budaragin V. V. Litvinov V. L.
Publisher： Taylor & Francis Ltd
ISSN： 1042-0150
Source： Radiation Effects and Defects in Solids, Vol.158, Iss.11-12, 2004-11, pp. : 771-781
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors
By Gueorguiev V. Ivanov T. Andreev S. Popova L.
Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. :
Access to resources
Recommend
Recrystallization and diffusion in sodium-implanted silicon
By Bolse W. Wang W.H. Illgner C. Lieb K.P. Keinonen J. Ewert J.C.
Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. :
Implanted muon states in porous silicon
By Harris P.J. Bayliss S.C. Canham L.T. Cottrell S.
Thin Solid Films, Vol. 297, Iss. 1, 1997-04 ,pp. :