I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

Author: Madhu K. V.   Kulkarni S. R.   Ravindra M.   Damle R.  

Publisher: Taylor & Francis Ltd

ISSN: 1042-0150

Source: Radiation Effects and Defects in Solids, Vol.163, Iss.11, 2008-11, pp. : 873-883

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