Method of ions acceleration for laser-induced implantation of semiconductor materials

By Czarnecka A.   Badziak J.   Parys P.   Rosinski M.   Wołowski J.  

Radiation Effects and Defects in Solids, Vol. 163, Iss. 4-6, 2008-04 ,pp. : 389-394

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Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials

By Wołowski J.   Badziak J.   Czarnecka A.   Boody F.P.   Gammino S.   Krása J.   Láska L.   Mezzasalma A.   Parys P.   Rosiński M.   Rohlena K.   Torrisi L.   Ullschmied J.  

Radiation Effects and Defects in Solids, Vol. 160, Iss. 10-12, 2005-10 ,pp. : 477-482

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Source-size measurements and charge distributions of ions accelerated from thin foils irradiated by high-intensity laser pulses

By Schreiber J.   Kaluza M.   Grüner F.   Schramm U.   Hegelich B.M.   Cobble J.   Geissler M.   Brambrink E.   Fuchs J.   Audebert P.   Habs D.   Witte K.  

Applied Physics B, Vol. 79, Iss. 8, 2004-12 ,pp. : 1041-1045

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Analysis of the nonlinear absorption mechanisms in ablation of transparent materials by high-intensity and ultrashort laser pulses

By Zavestovskaya Irina   Eliseev Peter   Krokhin Oleg   Men’kova Natalia  

Applied Physics A, Vol. 92, Iss. 4, 2008-09 ,pp. : 903-906

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Tungsten ions produced by infrared pulsed laser irradiation

By Torrisi L.  

Radiation Effects and Defects in Solids, Vol. 158, Iss. 10, 2003-10 ,pp. : 689-703

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