Reply to “Comment on isotopic mass effects for low-energy channeling in a silicon crystal”

By Zheng Li-Ping   Zhu Zhi-Yuan   Li Yong   Yan Long   Wang Song  

Radiation Effects and Defects in Solids, Vol. 166, Iss. 11, 2011-11 ,pp. : 870-872

Taylor & Francis Ltd

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Comment on “Isotopic mass effects for low-energy channeling in a silicon crystal”

By Zhang Zhu Lin   Zhang Lai   Padmanabhan Karur R.  

Radiation Effects and Defects in Solids, Vol. 166, Iss. 11, 2011-11 ,pp. : 866-869

Taylor & Francis Ltd

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RANGES AND PROFILES OF DISTRIBUTION OF LOW-ENERGY IONS CHANNELING IN METAL AND SEMICONDUCTOR SINGLE CRYSTALS

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Radiation Effects and Defects in Solids, Vol. 158, Iss. 7, 2003-01 ,pp. : 481-489

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Analysis of photoemission lines in silicon nitrided layers formed by low-energy nitrogen ion implantation in silicon

By Benkherourou O.   Sahnoune S.   Djabi M.   Deville J.-P.  

Vacuum, Vol. 53, Iss. 3, 1999-06 ,pp. : 427-433

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Molecular dynamics and quasidynamic simulations of low-energy particle bombardment effects during vapour-phase crystal growth: 10-50 eV Si and In atoms incident on (2 x 1)-terminated Si(001)

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