Author: Sun Ya-Bin Fu Jun Xu Jun Wang Yu-Dong Yang Ji Zhou Wei Zhang Wei Cui Jie Li Gao-Qing Liu Zhi-Hong Wei Su-Min Wang Feng Guan Feng-Ping Li Peng-Zhan Zhang Tian-Jue
Publisher: Taylor & Francis Ltd
ISSN: 1042-0150
Source: Radiation Effects and Defects in Solids, Vol.168, Iss.4, 2013-04, pp. : 253-263
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
By Praveen K. C. Pushpa N. Naik P. S. Cressler John D. Shiva H. B. Verma Shammi Tripathi Ambuj Gnana Prakash A. P.
Radiation Effects and Defects in Solids, Vol. 168, Iss. 7-8, 2013-08 ,pp. :
Total Dose Effects on 4H-SiC Bipolar Junction Transistors
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Recent advances with SiGe heterojunction bipolar transistors
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Germanium, carbon‐germanium, and silicon‐germanium triangulenes
JOURNAL OF COMPUTATIONAL CHEMISTRY, Vol. 36, Iss. 29, 2015-11 ,pp. :