In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors

Author： Praveen K. C.   Pushpa N.   Naik P. S.   Cressler John D.   Shiva H. B.   Verma Shammi   Tripathi Ambuj   Gnana Prakash A. P.  

Publisher： Taylor & Francis Ltd

ISSN： 1042-0150

Source： Radiation Effects and Defects in Solids, Vol.168, Iss.7-8, 2013-08, pp. : 620-624

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