β-Position Electronic Effects on the Singlet–Triplet Gaps of Divalent Five-Membered Rings XC₄H₃M (MC, Si, and Ge)

By Vessally E.   Nikoorazm M.   Esmaili F.   Afshar H. Goudarzi  

Phosphorus, Sulfur, and Silicon and the Related Elements, Vol. 186, Iss. 9, 2011-09 ,pp. : 2006-2020

Taylor & Francis Ltd

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Mono-Heteroatom Effects on Singlet-Triplet Energy Gaps of Divalent Five-Membered Ring XC3H3C (X = CH, N, P, and As)

By Vessally E.  

Phosphorus, Sulfur, and Silicon and the Related Elements, Vol. 184, Iss. 7, 2009-07 ,pp. : 1805-1811

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Heteroatom Effects on Singlet-Triplet Energy Gaps of Divalent Five-Membered Ring X2C2H2C (X = N, P, As, and Sb)

By Vessally E.   Abbasian M.   Ramazani A.   Heravi A. R. Poor  

Phosphorus, Sulfur, and Silicon and the Related Elements, Vol. 185, Iss. 4, 2010-04 ,pp. : 705-708

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ChemInform Abstract: RAMAN‐SPEKTREN UND BINDUNGSEIGENSCHAFTEN VON M2(CH3)6 (M=SI, GE, SN, PB) UND M2(C6H5)6 (M=SN, PB)

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Chemischer Informationsdienst. Organische Chemie, Vol. 2, Iss. 12, 1971-03 ,pp. : no-no

John Wiley & Sons Inc

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ChemInform Abstract: BINDUNGS‐UNTERSUCHUNGEN AN VERBINDUNGEN VON BOR MIT ELEMENTEN DER 4. GRUPPE 6. MITT. MASSENSPEKTROMETRISCHE UNTERSUCHUNGEN VON ME4M UND ME3M‐M′ME3 (M UND M′=C, SI, GE, SN UND PB), THERMODYNAMISCHE DATEN

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Chemischer Informationsdienst. Organische Chemie, Vol. 2, Iss. 39, 1971-09 ,pp. : no-no

John Wiley & Sons Inc

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