β-Position Electronic Effects on the Singlet–Triplet Gaps of Divalent Five-Membered Rings XC4H3M (MC, Si, and Ge)

Author: Vessally E.   Nikoorazm M.   Esmaili F.   Afshar H. Goudarzi  

Publisher: Taylor & Francis Ltd

ISSN: 1042-6507

Source: Phosphorus, Sulfur, and Silicon and the Related Elements, Vol.186, Iss.9, 2011-09, pp. : 2006-2020

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