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By Phillips Thomas   Macleod Todd   Ho Fat  

Integrated Ferroelectrics, Vol. 96, Iss. 1, 2008-01 ,pp. : 69-74

Taylor & Francis Ltd

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A Mathematical Model for the Common-Drain Amplifier Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor

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Integrated Ferroelectrics, Vol. 139, Iss. 1, 2012-12 ,pp. : 106-115

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Simulation Model of a Ferroelectric Field Effect Transistor

By MacLeod Todd C.   Ho Fat Duen  

Integrated Ferroelectrics, Vol. 49, Iss. 1, 2002-01 ,pp. : 51-59

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Thermal-Dependent Nonvolatile Memory Characteristics Based on Organic Ferroelectric Field-Effect Transistor

By Kim Won-Ho   Choi Yoonseuk   Bae Jin-Hyuk  

Journal of Nanoscience and Nanotechnology, Vol. 13, Iss. 10, 2013-10 ,pp. : 7080-7082

American Scientific Publishers

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Empirical Data of the Metal-Ferroelectric-Semiconductor Field Effect Transistor Polarization and Channel Resistance for Timing and Retention Analysis

By Hunt Mitchell R.   McCartney Crystal L.   Mitchell Cody   Evans Joseph   Ho Fat D.  

Integrated Ferroelectrics, Vol. 157, Iss. 1, 2014-10 ,pp. : 12-22

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