Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure

Author: Nishikawa T.   Otsuka T.   Morita K.  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.48, Iss.1, 2002-01, pp. : 41-50

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Abstract