Multi-Layer Ferroelectric Pb(Zr0.52Ti0.48)O3 Thick Films Prepared by Pulsed Laser Deposition

By Cheng Hsiu-Fung   Lin Cheng-Shiung   Lin I-Nan  

Integrated Ferroelectrics, Vol. 46, Iss. 1, 2002-01 ,pp. : 17-26

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ANALYSES OF C-V CHARACTERISTICS OF MFIS DEVICE UNDER HIGH AND LOW FREQUENCY

By CHENG JI   YINYIN LIN   TING-AO TANG  

Integrated Ferroelectrics, Vol. 73, Iss. 1, 2005-09 ,pp. : 57-65

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FERROELECTRIC PROPERTIES OF Pt/PbZr 0.53 Ti 0.47 O 3 /PbO/Si (MFIS) STRUCTURES ACCORDING TO THE SUBSTRATE TEMPERATURE DURING THE PBO BUFFER LAYER DEPOSITION

By PARK CHUL-HO   WON MI-SOOK   OH YOUNG-HUN   SON YOUNG-GOOK  

Integrated Ferroelectrics, Vol. 75, Iss. 1, 2005-10 ,pp. : 11-16

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Reduction of Leakage Current by HfO2 High K Dielectric Film Stacked on the Ferroelectric Layer of a MFIS Structure

By Nishikawa T.   Otsuka T.   Morita K.  

Integrated Ferroelectrics, Vol. 48, Iss. 1, 2002-01 ,pp. : 41-50

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ENHANCEMENT OF MEMORY RETENTION TIME OF MFIS STRUCTURE WITH SBT FERROELECTRIC AND SiO2 BUFFER LAYERS TREATED BY NITROGEN RADICAL IRRADIATION

By Van Hai Le   Kanashima Takeshi   Okuyama Masanori  

Integrated Ferroelectrics, Vol. 96, Iss. 1, 2008-01 ,pp. : 27-39

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