PREPARATION AND CHARACTERIZATION OF HAFNIUM SILICATE DIELECTRIC LAYERS BY PHOTO-ASSISTED MOCVD USING MIXED PRECURSOR OF Hf(O-t-C4H9)4 AND Si(O-t-C4H9)4

Author: Lee Hyun   Kanashima Takeshi   Okuyama Masanori  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.97, Iss.1, 2008-01, pp. : 103-110

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