Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100oC in N2 or wet O2 ambient

Author： Nipoti R.   Parisini A.  

Publisher： Taylor & Francis Ltd

ISSN： 1463-6417

Source： Philosophical Magazine B, Vol.80, Iss.4, 2000-04, pp. : 647-659

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