Identification of interfacial layers in Ohmic contacts to n-type GaN and Al x Ga1– x N/GaN heterostructures using high-resolution electron microscopy

Author： Bright A. N.   Humphreys C. J.  

Publisher： Taylor & Francis Ltd

ISSN： 1463-6417

Source： Philosophical Magazine B, Vol.81, Iss.11, 2001-11, pp. : 1725-1744

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