Related content

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

By  

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 126601-126603

IOP Publishing

Access to resources Recommend Favorite

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

By  

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 126101-126103

IOP Publishing

Access to resources Recommend Favorite

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

By XingZhao   Zhong-ShanZheng   Bin-HongLi   Jian-TouGao   FangYu  

Chinese Physics C, Vol. 39, Iss. 9, 2015-09 ,pp. : 96101-96107

IOP Publishing

Access to resources Recommend Favorite

Low temperature operation of 0.13 $\mu$m Partially-Depleted SOI nMOSFETs with floating body

By  

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 31-34

Edp Sciences

Access to resources Recommend Favorite

Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

By Kai Lü   Jing Chen   Jie-Xin Luo   Wei-Wei He   Jian-Qiang Huang   Zhan Chai   Xi Wang  

Chinese Physics B, Vol. 24, Iss. 8, 2015-08 ,pp. : 88501-88504

IOP Publishing

Access to resources Recommend Favorite