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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

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Low temperature operation of 0.13 $\mu$m Partially-Depleted SOI nMOSFETs with floating body

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Back gate voltage and buried-oxide thickness influences on the series resistance of fully depleted SOI MOSFETs at 77 K

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