Related content

Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

By  

Chinese Physics Letters, Vol. 32, Iss. 8, 2015-01 ,pp. : 88505-88508

IOP Publishing

Access to resources Recommend Favorite

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

By Chao Peng   Zhi-Yuan Hu   Bing-Xu Ning   Hui-Xiang Huang   Shuang Fan   Zheng-Xuan Zhang   Da-Wei Bi   Yun-Fei En  

Chinese Physics B, Vol. 23, Iss. 9, 2014-09 ,pp. : 90702-90708

IOP Publishing

Access to resources Recommend Favorite

The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

By  

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 126601-126603

IOP Publishing

Access to resources Recommend Favorite

Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress

By  

Chinese Physics Letters, Vol. 31, Iss. 12, 2014-12 ,pp. : 126101-126103

IOP Publishing

Access to resources Recommend Favorite

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

By Li-Na Su   Li Lv   Xin-Xing Li   Hua Qin   Xiao-Feng Gu  

Chinese Physics Letters, Vol. 32, Iss. 4, 2015-04 ,pp. : 47301-47303

IOP Publishing

Access to resources Recommend Favorite