Development of refractory ohmic contact materials for gallium arsenide compound semiconductors

ISSN： 1468-6996

Source： Science and Technology of Advanced Materials, Vol.3, Iss.1, 2002-03, pp. : 1-27

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Monolithic gallium arsenide cantilever for scanning near-field microscopy

By Heisig S. Danzebrink H.-U. Leyk A. Mertin W. Munster S. Oesterschulze E.

Ultramicroscopy, Vol. 71, Iss. 1, 1998-03 ,pp. : 99-105

Elsevier

Access to resources Recommend Favorite

Artefacts in iodine ion milling of some compound semiconductors

By Wright A.C.

Ultramicroscopy, Vol. 83, Iss. 1, 2000-05 ,pp. : 1-8

Elsevier

Access to resources Recommend Favorite

Polarity determination of III-V compound semiconductors by large-angle convergent beam electron diffraction

By Jager C. Spiecker E. Morniroli J.P. Jager W.

Ultramicroscopy, Vol. 92, Iss. 3, 2002-08 ,pp. : 273-283

Elsevier

Access to resources Recommend Favorite

Non-contact measurement of acoustic emission in materials by laser interferometry

Science and Technology of Advanced Materials, Vol. 1, Iss. 3, 2000-09 ,pp. : 26-34

IOP Publishing

Access to resources Recommend Favorite

Effects of Al ion implantation to 4H-SiC on the specific contact resistance of TiAl-based contact materials

Science and Technology of Advanced Materials, Vol. 7, Iss. 6, 2006-09 ,pp. : 16-21

IOP Publishing

Access to resources Recommend Favorite