The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

By  

Science and Technology of Advanced Materials, Vol. 16, Iss. 3, 2015-06 ,pp. : 279-285

IOP Publishing

Access to resources Recommend Favorite

Ultraviolet MSM photodetector with fast response based on ZnO thin film

By Harzallah Ghania   Remram Mohamed  

International Journal of Nanoparticles, Vol. 6, Iss. 2-3, 2013-06 ,pp. : 153-160

Inderscience Publishers

Access to resources Recommend Favorite

Fabrication of oxide-gate thin-film transistors using PECVD/PLD multichamber system

By  

Science and Technology of Advanced Materials, Vol. 1, Iss. 3, 2000-09 ,pp. : 54-57

IOP Publishing

Access to resources Recommend Favorite

C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition

By  

Science and Technology of Advanced Materials, Vol. 4, Iss. 4, 2003-07 ,pp. : 96-100

IOP Publishing

Access to resources Recommend Favorite

Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films

By  

Science and Technology of Advanced Materials, Vol. 14, Iss. 6, 2013-12 ,pp. : 26-40

IOP Publishing

Access to resources Recommend Favorite