The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In–Ga–Zn–O thin film transistors

Publisher： IOP Publishing

E-ISSN： 1878-5514|16|3|279-285

ISSN： 1468-6996

Source： Science and Technology of Advanced Materials, Vol.16, Iss.3, 2015-06, pp. : 279-285

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