Comparison between N₂ and O₂ anneals on the integrity of an Al₂O₃/Si₃N₄/SiO₂/Si memory gate stack

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Chinese Physics B, Vol. 23, Iss. 8, 2014-08 ,pp. : 88501-88505

IOP Publishing

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Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

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Charge trapping in Si-implanted SiO2-Si memory devices athigh electric fields and elevated temperatures

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Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack

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Impact of charge trapping effect on negative bias temperature instability in P-MOSFETs with HfO2/SiON gate stack

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