Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high- k dielectric/SiO 2 gate stack

Author： Xue-Feng Zhang   Jing-Ping Xu   Pui-To Lai   Chun-Xia Li   Jian-Guo Guan  

Publisher： IOP Publishing

ISSN： 1009-1963

Source： Chinese Physics, Vol.16, Iss.12, 2007-12, pp. : 3820-3826

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