Low voltage TEM for semiconductor analysis

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.326, Iss.1, 2011-11, pp. : 177-180

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Imaging electron detectors for low-voltage TEM

Journal of Physics: Conference Series , Vol. 241, Iss. 1, 2010-07 ,pp. : 45-48

IOP Publishing

Access to resources Recommend Favorite

Low-voltage control of ferromagnetism in a semiconductor p–n junction

New Journal of Physics, Vol. 11, Iss. 2, 2009-02 ,pp. : 127-135

IOP Publishing

Access to resources Recommend Favorite

Resolution Improvement in Aberration-Corrected Low- Voltage TEM with Monochromator at 60 kV

Journal of Physics: Conference Series , Vol. 644, Iss. 1, 2015-10 ,pp. : 136-139

IOP Publishing

Access to resources Recommend Favorite

Application of lattice strain analysis of semiconductor device by nano-beam diffraction using the 300 kV Cold-FE TEM

Journal of Physics: Conference Series , Vol. 241, Iss. 1, 2010-07 ,pp. : 65-68

IOP Publishing

Access to resources Recommend Favorite

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

By Wei Wu Bo Zhang Xiao-Rong Luo Jian Fang Zhao-Ji Li

Chinese Physics B, Vol. 23, Iss. 3, 2014-03 ,pp. : 38503-38507

IOP Publishing

Access to resources Recommend Favorite