On the properties of photovoltaic X-ray detectors based on GaAs epitaxial structures

By Dvoryankin V.   Dikaev Yu.   Kudryashov A.  

Technical Physics, Vol. 49, Iss. 6, 2004-06 ,pp. : 787-789

MAIK Nauka/Interperiodica

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Photovoltaic X-ray detectors based on epitaxial GaAs structures

By Achmadullin R.   Dvoryankin V.   Dvoryankina G.   Dikaev Yu.   Ermakov M.   Ermakova O.   Krikunov A.   Kudryashov A.   Petrov A.   Telegin A.  

Technical Physics Letters, Vol. 28, Iss. 1, 2002-01 ,pp. : 15-16

MAIK Nauka/Interperiodica

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Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis

By Lesnik Andreas   Bläsing Jürgen   Hennig Jonas   Dadgar Armin   Krost Alois  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 35, 2014-09 ,pp. : 355106-355111

IOP Publishing

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Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction

By Dvoryankin V.   Dvoryankina G.   Ivanov Yu.   Kudryashov A.   Petrov A.  

Technical Physics, Vol. 55, Iss. 7, 2010-07 ,pp. : 1071-1073

MAIK Nauka/Interperiodica

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Effect of a wideband heteroepitaxial emitter on dynamics of turn-off switching of high-voltage power GaAs p-i-n diodes

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Journal of Physics: Conference Series , Vol. 690, Iss. 1, 2016-02 ,pp. : 219-221

IOP Publishing

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