Cu-doped GaN grown by molecular beam epitaxy

Publisher: IOP Publishing

ISSN: 1742-6596

Source: Journal of Physics: Conference Series , Vol.200, Iss.6, 2010-01, pp. : 21-24

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract