Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

Author： Mamutin V.   Ulin V.   Tret’yakov V.   Ivanov S.   Konnikov S.   Kop’ev P.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.25, Iss.1, 1999-01, pp. : 1-3

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge

By Mamutin V.   Zhmerik V.   Shubina T.   Toropov A.   Lebedev A.   Vekshin V.   Ivanov S.   Kop’ev P.  

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 467-469

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electron diffraction on GaAs nanowhiskers grown on Si(100) and Si(111) substrates by molecular-beam epitaxy

By Soshnikov I.   Cirlin G.   Tonkikh A.   Nevedomski V.   Samsonenko Yu.   Ustinov V.  

Physics of the Solid State, Vol. 49, Iss. 8, 2007-08 ,pp. : 1440-1445

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy

By Sui-Xing Shi   Zhen-Yu Lu   Zhi Zhang   Chen Zhou   Ping-Ping Chen   Jin Zou  

Chinese Physics Letters, Vol. 31, Iss. 9, 2014-09 ,pp. : 98101-98104

IOP Publishing

Access to resources Recommend Favorite

As4 incorporation kinetics in GaAs (001) molecular-beam epitaxy

By Galitsyn Yu.   Marakhovka I.   Moshchenko S.   Mansurov V.  

Technical Physics Letters, Vol. 24, Iss. 4, 1998-04 ,pp. : 260-262

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

GaN film growth on LiNbO3 surfaces using molecular beam epitaxy

By  

Journal of Physics: Conference Series , Vol. 187, Iss. 1, 2009-09 ,pp. : 96-101

IOP Publishing

Access to resources Recommend Favorite