Publisher: IOP Publishing
ISSN: 1742-6596
Source: Journal of Physics: Conference Series , Vol.214, Iss.1, 2010-03, pp. : 507-511
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Journal of Physics: Conference Series , Vol. 214, Iss. 1, 2010-03 ,pp. :
On quantitative mapping of EL2 concentration in semi-insulating GaAs wafers
Journal de Physique III, Vol. 1, Iss. 9, 1991-09 ,pp. :
Vacancies and Dominant Electrically Active Defects in Bulk Semi-Insulating GaAs
Le Journal de Physique IV, Vol. 05, Iss. C1, 1995-01 ,pp. :