Features in the formation of Ge/Si multilayer nanostructures under ion-beam-assisted crystallization

By Chebotarev S.   Paschenko A.   Lunin L.   Irkha V.  

Technical Physics Letters, Vol. 39, Iss. 8, 2013-08 ,pp. : 726-729

MAIK Nauka/Interperiodica

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A study of photosensitive InAs/GaAs heterostructures with quantum dots grown by ion-beam deposition

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Photoluminescence of Si/Ge nanostructures grown by molecular-beam epitaxy at low temperatures

By Burbaev T.   Kurbatov V.   Pogosov A.   Rzaev M.   Sibel’din N.   Tsvetkov V.  

Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 71-73

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Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots

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Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 58-62

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Ge/Si quantum dots in external electric and magnetic fields

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Physics of the Solid State, Vol. 46, Iss. 1, 2004-01 ,pp. : 56-59

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