A study of photosensitive InAs/GaAs heterostructures with quantum dots grown by ion-beam deposition

Author： Lunin L.   Sysoev I.   Alfimova D.   Chebotarev S.   Pashchenko A.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1027-4510

Source： Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, Vol.5, Iss.3, 2011-06, pp. : 559-562

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Ge/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxy

By  

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 286-289

IOP Publishing

Access to resources Recommend Favorite

Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes

By Patanè A.   Henini M.   Polimeni A.   Eaves L.   Main P.C.   Al-Khafaji M.   Cullis A.G.  

Superlattices and Microstructures, Vol. 25, Iss. 1, 1999-01 ,pp. : 113-117

Academic Press

Access to resources Recommend Favorite

Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots

By  

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 319-322

IOP Publishing

Access to resources Recommend Favorite

High Characteristic Temperature 1.3 μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

By Hai-Ming Ji   Tao Yang   Yu-Lian Cao   Peng-Fei Xu   Yong-Xian Gu   Wen-Quan Ma   Zhan-Guo Wang  

Chinese Physics Letters, Vol. 27, Iss. 2, 2010-02 ,pp. : 27801-27803

IOP Publishing

Access to resources Recommend Favorite

Quantum Hall effect-insulator transition in the InAs/GaAs system with quantum dots

By Kul’bachinskii V.   Lunin R.   Rogozin V.   Golikov A.   Kytin V.   Zvonkov B.   Nekorkin S.   Filatov D.   Visser A.  

Physics of the Solid State, Vol. 45, Iss. 4, 2003-04 ,pp. : 762-767

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite