Progress in research of GaN-based LEDs fabricated on SiC substrate

By Hua-Yong Xu   Xiu-Fang Chen   Yan Peng   Ming-Sheng Xu   Yan Shen   Xiao-Bo Hu   Xian-Gang Xu  

Chinese Physics B, Vol. 24, Iss. 6, 2015-06 ,pp. : 67305-67312

IOP Publishing

Access to resources Recommend Favorite

Progress and prospects of GaN-based LEDs using nanostructures

By Li-Xia Zhao   Zhi-Guo Yu   Bo Sun   Shi-Chao Zhu   Ping-Bo An   Chao Yang   Lei Liu   Jun-Xi Wang   Jin-Min Li  

Chinese Physics B, Vol. 24, Iss. 6, 2015-06 ,pp. : 68506-68517

IOP Publishing

Access to resources Recommend Favorite

An explanation for catastrophic failures of GaN-based vertical structure LEDs subjected to thermoelectric stressing

By Liu Lilin   Yin Luqiao   Teng Dongdong   Zhang Jianhua   Wang Gang   Liu Lilin  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 30, 2015-08 ,pp. : 305102-305110

IOP Publishing

Access to resources Recommend Favorite

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

By Bo Wang   Shi-Chen Su   Miao He   Hong Chen   Wen-Bo Wu   Wei-Wei Zhang   Qiao Wang   Yu-Long Chen   You Gao   Li Zhang   Ke-Bao Zhu   Yan Lei  

Chinese Physics B, Vol. 22, Iss. 10, 2013-10 ,pp. : 106802-106805

IOP Publishing

Access to resources Recommend Favorite

Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography

By Chang Ki Soo   Yang Sun Choel   Kim Jae-Young   Kook Myung Ho   Ryu Seon Young   Choi Hae Young   Kim Geon Hee  

Sensors, Vol. 12, Iss. 4, 2012-04 ,pp. : 4648-4660

MDPI

Access to resources Recommend Favorite