Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

Author： Bo Wang   Shi-Chen Su   Miao He   Hong Chen   Wen-Bo Wu   Wei-Wei Zhang   Qiao Wang   Yu-Long Chen   You Gao   Li Zhang   Ke-Bao Zhu   Yan Lei  

Publisher： IOP Publishing

E-ISSN： 1741-4199|22|10|106802-106805

ISSN： 1674-1056

Source： Chinese Physics B, Vol.22, Iss.10, 2013-10, pp. : 106802-106805

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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