Interfacial sources of extended defects in nonpolar and semipolar III-Nitride semiconductors

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.281, Iss.1, 2011-02, pp. : 89-94

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Nucleation of III nitride semiconductors in heteroepitaxy

By Kukushkin S. Bessolov V. Osipov A. Luk’yanov A.

Physics of the Solid State, Vol. 43, Iss. 12, 2001-12 ,pp. : 2229-2233

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

III-Nitride Quantum Devices -- Microphotonics

By Jiang H. X. Lin J. Y.

Critical Reviews in Solid State and Material Sciences, Vol. 28, Iss. 2, 2003-04 ,pp. : 131-183

Taylor & Francis Ltd

Access to resources Recommend Favorite

Defects in nitride-based semiconductors probed by positron annihilation

Journal of Physics: Conference Series , Vol. 505, Iss. 1, 2014-04 ,pp. : 41-46

IOP Publishing

Access to resources Recommend Favorite

CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS

Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. : C6-335-C6-336

Edp Sciences

Access to resources Recommend Favorite

Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors

Journal de Physique III, Vol. 7, Iss. 7, 1997-07 ,pp. : 1389-1398

Edp Sciences

Access to resources Recommend Favorite