Insights into annealing-induced ohmic contact formation at graphene/p-GaN interface with a NiOx contact layer

Publisher: IOP Publishing

E-ISSN: 1361-6463|48|9|95102-95108

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.48, Iss.9, 2015-03, pp. : 95102-95108

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