Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Publisher: IOP Publishing

E-ISSN: 1741-4199|24|11|116803-116806

ISSN: 1674-1056

Source: Chinese Physics B, Vol.24, Iss.11, 2015-11, pp. : 116803-116806

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